Pulsed laser deposition of ITO nanorods in argon and OLED applications
Identifieur interne : 000637 ( Main/Repository ); précédent : 000636; suivant : 000638Pulsed laser deposition of ITO nanorods in argon and OLED applications
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Abstract
Indium tin oxide (ITO) nanorods were deposited in argon gas environment on glass substrate at 250 °C by a pulsed Nd:YAG laser, with laser parameters of 10 Hz, 355 nm and 2-3 J/cm2. The formation of ITO nanorods was found to depend strongly on argon pressure and deposition duration, of (4-7) Pa and (30-60 min) respectively. At the initial growth stage, a large number of nucleation sites were first formed which eventually evolved into pin-needle types of nanorods. For extended period of deposition, oval-shaped lumps were seen to be formed among the nanorods. The growth of spherical tips in nanorods suggests the vapor-liquid-solid (VLS) mechanism. The XRD patterns show that ITO with In2O3 bixbyite structure is strongly orientated in <111> direction. The presence of ITO nanorods, however, was found to improve the organic light emitting diodes (OLED) performance with higher brightness and lower turn-on voltage, as compared to OLED fabricated with commercial ITO. ITO samples were also deposited in N2 but nanorod was not observed and its OLED failed to operate.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed laser deposition of ITO nanorods in argon and OLED applications</title><author><name sortKey="Tan, Sek Sean" uniqKey="Tan S">Sek-Sean Tan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>63100 Cyberjaya</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>63100 Cyberjaya</wicri:noRegion></affiliation></author><author><name sortKey="Kee, Yeh Yee" uniqKey="Kee Y">Yeh-Yee Kee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>63100 Cyberjaya</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>63100 Cyberjaya</wicri:noRegion></affiliation></author><author><name sortKey="Wong, Hin Yong" uniqKey="Wong H">Hin-Yong Wong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>63100 Cyberjaya</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>63100 Cyberjaya</wicri:noRegion></affiliation></author><author><name sortKey="Tou, Teck Yong" uniqKey="Tou T">Teck-Yong Tou</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>63100 Cyberjaya</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Malaisie</country><wicri:noRegion>63100 Cyberjaya</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0356407</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0356407 INIST</idno><idno type="RBID">Pascal:13-0356407</idno><idno type="wicri:Area/Main/Corpus">000488</idno><idno type="wicri:Area/Main/Repository">000637</idno></publicationStmt><seriesStmt><idno type="ISSN">0257-8972</idno><title level="j" type="abbreviated">Surf. coat. technol.</title><title level="j" type="main">Surface & coatings technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Application</term><term>Laser deposition</term><term>Pulsed lasers</term><term>Surface treatments</term><term>Tin oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser pulsé</term><term>Dépôt laser</term><term>Application</term><term>Oxyde d'étain</term><term>Traitement surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) nanorods were deposited in argon gas environment on glass substrate at 250 °C by a pulsed Nd:YAG laser, with laser parameters of 10 Hz, 355 nm and 2-3 J/cm<sup>2</sup>. The formation of ITO nanorods was found to depend strongly on argon pressure and deposition duration, of (4-7) Pa and (30-60 min) respectively. At the initial growth stage, a large number of nucleation sites were first formed which eventually evolved into pin-needle types of nanorods. For extended period of deposition, oval-shaped lumps were seen to be formed among the nanorods. The growth of spherical tips in nanorods suggests the vapor-liquid-solid (VLS) mechanism. The XRD patterns show that ITO with In<sub>2</sub>O<sub>3</sub> bixbyite structure is strongly orientated in <111> direction. The presence of ITO nanorods, however, was found to improve the organic light emitting diodes (OLED) performance with higher brightness and lower turn-on voltage, as compared to OLED fabricated with commercial ITO. ITO samples were also deposited in N<sub>2</sub> but nanorod was not observed and its OLED failed to operate.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0257-8972</s0></fA01><fA02 i1="01"><s0>SCTEEJ</s0></fA02><fA03 i2="1"><s0>Surf. coat. technol.</s0></fA03><fA05><s2>231</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Pulsed laser deposition of ITO nanorods in argon and OLED applications</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Taiwan Association for Coating and Thin Film Technology International Thin Film Conference (TACT 2011), Kenting, Taiwan, 20-23 November 2011</s1></fA09><fA11 i1="01" i2="1"><s1>TAN (Sek-Sean)</s1></fA11><fA11 i1="02" i2="1"><s1>KEE (Yeh-Yee)</s1></fA11><fA11 i1="03" i2="1"><s1>WONG (Hin-Yong)</s1></fA11><fA11 i1="04" i2="1"><s1>TOU (Teck-Yong)</s1></fA11><fA12 i1="01" i2="1"><s1>TING (Jyh-Ming)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HUANG (Jow-Lay)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>LU (Fu-Hsing)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>LEE (Jyh-Wei)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>WONG (Ming-Show)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>PARK (Hyung-Ho)</s1><s9>ed.</s9></fA12><fA12 i1="07" i2="1"><s1>VEPREK (Stan)</s1><s9>ed.</s9></fA12><fA12 i1="08" i2="1"><s1>OKAMOTO (Koichi)</s1><s9>ed.</s9></fA12><fA12 i1="09" i2="1"><s1>HUANG (Jia-Hong)</s1><s9>ed.</s9></fA12><fA12 i1="10" i2="1"><s1>YAMAMOTO (Kenji)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Faculty of Engineering, Multimedia University</s1><s2>63100 Cyberjaya</s2><s3>MYS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Materials Science and Engineering, National Cheng Kung University</s1><s2>Tainan 701</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA15 i1="02"><s1>Department of Materials Science and Engineering, National Chung Hsing University</s1><s3>TWN</s3><sZ>3 aut.</sZ></fA15><fA15 i1="03"><s1>Department of Materials Engineering, Ming Chi University of Technology</s1><s3>TWN</s3><sZ>4 aut.</sZ></fA15><fA15 i1="04"><s1>Department of Materials Science and Engineering, National Dong Hwa University</s1><s3>TWN</s3><sZ>5 aut.</sZ></fA15><fA15 i1="05"><s1>Thin Film Materials Research Center, Korea Institute of Science and Technology</s1><s3>KOR</s3><sZ>6 aut.</sZ></fA15><fA15 i1="06"><s1>Department of Chemistry, Technical University Munich</s1><s3>DEU</s3><sZ>7 aut.</sZ></fA15><fA15 i1="07"><s1>Institute for Materials Chemistry and Engineering Kyushu University</s1><s3>JPN</s3><sZ>8 aut.</sZ></fA15><fA15 i1="08"><s1>Department of Engineering and System Science, National Tsing Hua University</s1><s3>TWN</s3><sZ>9 aut.</sZ></fA15><fA15 i1="09"><s1>Materials Research Laboratory, Kobe Steel Ltd</s1><s3>JPN</s3><sZ>10 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>Taiwan Association for Coating and Thin Film Technology (TACT)</s1><s3>TWN</s3><s9>org-cong.</s9></fA18><fA20><s1>98-101</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15987</s2><s5>354000504242670210</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0356407</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface & coatings technology</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) nanorods were deposited in argon gas environment on glass substrate at 250 °C by a pulsed Nd:YAG laser, with laser parameters of 10 Hz, 355 nm and 2-3 J/cm<sup>2</sup>. The formation of ITO nanorods was found to depend strongly on argon pressure and deposition duration, of (4-7) Pa and (30-60 min) respectively. At the initial growth stage, a large number of nucleation sites were first formed which eventually evolved into pin-needle types of nanorods. For extended period of deposition, oval-shaped lumps were seen to be formed among the nanorods. The growth of spherical tips in nanorods suggests the vapor-liquid-solid (VLS) mechanism. The XRD patterns show that ITO with In<sub>2</sub>O<sub>3</sub> bixbyite structure is strongly orientated in <111> direction. The presence of ITO nanorods, however, was found to improve the organic light emitting diodes (OLED) performance with higher brightness and lower turn-on voltage, as compared to OLED fabricated with commercial ITO. ITO samples were also deposited in N<sub>2</sub> but nanorod was not observed and its OLED failed to operate.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="X"><s0>001D11C06</s0></fC02><fC02 i1="03" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser pulsé</s0><s5>55</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Pulsed lasers</s0><s5>55</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dépôt laser</s0><s5>56</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Laser deposition</s0><s5>56</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Application</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Application</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="GER"><s0>Anwendung</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Aplicación</s0><s5>57</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Tin oxide</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="GER"><s0>Zinnoxid</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>58</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Traitement surface</s0><s5>59</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Surface treatments</s0><s5>59</s5></fC03><fN21><s1>336</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>TACT-2011 Taiwan Association for Coating and Thin Film Technology International Thin Film Conference</s1><s3>Kenting TWN</s3><s4>2011-11-20</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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